Search results for "Dark current"

Design and characterization of the SiPM tracking system of NEXT-DEMO, a demonstrator prototype of the NEXT-100 experiment

2013

NEXT-100 experiment aims at searching the neutrinoless double-beta decay of the Xe-136 isotope using a TPC filled with a 100 kg of high-pressure gaseous xenon, with 90% isotopic enrichment. The experiment will take place at the Laboratorio Subterraneo de Canfranc (LSC), Spain. NEXT-100 uses electroluminescence (EL) technology for energy measurement with a resolution better than 1% FWHM. The gaseous xenon in the TPC additionally allows the tracks of the two beta particles to be recorded, which are expected to have a length of up to 30 cm at 10 bar pressure. The ability to record the topological signature of the beta beta 0 nu events provides a powerful background rejection factor for the bet…

Charge Transport in Trap-Sensitized Infrared PbS Quantum-Dot-Based Photoconductors: Pros and Cons

2018

Control of quantum-dot (QD) surface chemistry offers a direct approach for the tuning of charge-carrier dynamics in photoconductors based on strongly coupled QD solids. We investigate the effects of altering the surface chemistry of PbS QDs in such QD solids via ligand exchange using 3-mercaptopropionic acid (MPA) and tetrabutylammonium iodide (TBAI). The roll-to-roll compatible doctor-blade technique was used for the fabrication of the QD solid films as the photoactive component in photoconductors and field-effect phototransistors. The ligand exchange of the QD solid film with MPA yields superior device performance with higher photosensitivity and detectivity, which is due to less dark cur…

ZnO/ZnS heterostructures for hydrogen production by photoelectrochemical water splitting

2016

This work studies the photoelectrochemical behavior of novel ZnO/ZnS heterostructures obtained by means of anodization in water and glycerol/water/NH4F electrolytes with different Na2S additions under controlled hydrodynamic conditions. For this purpose different techniques such as Field Emission Scanning Electronic Microscopy (FE-SEM) with EDX, Raman spectroscopy and photoelectrochemical water splitting tests under standard AM 1.5 conditions have been carried out. The obtained results showed that the hydrodynamic conditions promoted an ordered nanotubular morphology which facilitates electron-hole separation and consequently, the photoelectrochemical activity for water splitting is enhance…

Growth and characterization of PbI2-decorated ZnO nanowires for photodetection applications

2020

Financial support provided by Scientific Research Project for Students and Young Researchers Nr. SJZ/2017/1 realized at the Institute of Solid State Physics, University of Latvia is greatly acknowledged. The authors are grateful to Liga Bikse for XRD measurements.

1993

Langmuir-Blodgett films from a polymer with triphenylene moieties in the side groups deposited on a quartz substratum with aluminium and gold electrodes show a dark conductivity in the plane of the Langmuir-Blodgett film. This dark conductivity is increased using gold electrodes as compared with aluminium electrodes. It depends in a superlinear way upon the applied electric field and is not enhanced by oxygen. The dark conductivity can be enhanced by doping the Langmuir-Blodgett films with iodine but it is not influenced by doping the Langmuir-Blodgett films with 2,4,7-trinitro-9-fluorenone. Upon excitation in the absorption band of the triphenylene moiety an in-plane photocurrent, which is…

High-sensitive switchable photodetector based on BiFeO3 film with in-plane polarization

2015

A high-sensitive and fast-response photodetector based on BiFeO3 (BFO) ferroelectric thin film is fabricated using coplanar electrode configuration. A large photocurrent/dark current ratio is found up to two orders of magnitude at 1 V bias. Enhanced photocurrent and rectification behavior of the photodetector are observed after applying high voltage pulses to the BFO film. The short-circuit current varies systematically with the poling process and increases linearly with the light density. On the contrary, the open-circuit voltage keeps as a constant during the measurements. We attribute these behaviors to the depolarization field and the interfacial fields at the film-electrode interfaces.…

Silicon Photomultipliers Signal-to-Noise Ratio in the Continuous Wave Regime

2014

 Abstract— We report on Signal-to-Noise Ratio measurements carried out, in the continuous wave regime, at different bias voltages, frequencies and temperatures, on a class of silicon photomultipliers fabricated in planar technology on silicon p- type substrate. Signal-to-Noise Ratio has been measured as the ratio of the photogenerated current, filtered and averaged by a lock-in amplifier, and the Root Mean Square deviation of the same current. The measured noise takes into account the shot noise, resulting from the photocurrent and the dark current. We have also performed a comparison between our SiPMs and a photomultiplier tube in terms of Signal-to-Noise Ratio, as a function of the tempe…

The characterisation of the multianode photomultiplier tubes for the RICH-1 upgrade project at COMPASS

2008

Abstract A major upgrade of the Cherenkov photon detection system of COMPASS RICH-1 has been performed and it has been in operation since the 2006 physics run. The inner part of the photon detector has been replaced by a different technology in order to measure Cherenkov photons at high photoelectron rates, up to several times 10 6 per second and per channel. Cherenkov photons from 200 to 750 nm are detected by 576 multianode photomultiplier tubes (MAPMTs) with 16 channels each, coupled to individual fused silica lens telescopes and fast, high sensitivity and high time resolution electronics read-out. To guarantee an optimal performance of the complete system, parameters like dark current, …

Gain stabilization and noise minimization for SiPMs at cryogenic temperatures

2018

Abstract The performance of solid-state photon detectors such as avalanche photodiodes or silicon photomultipliers (SiPMs) is strongly affected by temperature. Important device characteristics for the detection of low light levels or single photons are photon detection efficiency, dark noise, and gain. In the present work the C-series SiPMs from SensL was characterized in cryogenic environments. At 77  K the SiPMs proved to be an excellent choice for single photon detection and an operation point with minimum noise contributions was found. At 4  K the performance was degraded, exhibiting a smaller gain and a larger noise.

SNR measurements of silicon photomultipliers in the continuous wave regime

2014

We report on our Signal-to-Noise Ratio (SNR) measurements carried out, in the continuous wave regime, at different frequencies and at various temperatures, on a novel class of silicon photomultipliers (SiPMs) fabricated in planar technology on silicon p-type substrate. SNR of SiPMs is given by the ratio of the photogenerated current, filtered and averaged by a lock-in amplifier, and the Root Mean Square (RMS) deviation of the same current. In our measurements, we have employed a 10 Hz equivalent noise bandwidth, around the lock-in amplifier reference frequency. The measured noise takes into account the shot noise, resulting from the photocurrent and the dark current, while background light …