Search results for "Dark current"

showing 10 items of 15 documents

ZnO/ZnS heterostructures for hydrogen production by photoelectrochemical water splitting

2016

This work studies the photoelectrochemical behavior of novel ZnO/ZnS heterostructures obtained by means of anodization in water and glycerol/water/NH4F electrolytes with different Na2S additions under controlled hydrodynamic conditions. For this purpose different techniques such as Field Emission Scanning Electronic Microscopy (FE-SEM) with EDX, Raman spectroscopy and photoelectrochemical water splitting tests under standard AM 1.5 conditions have been carried out. The obtained results showed that the hydrodynamic conditions promoted an ordered nanotubular morphology which facilitates electron-hole separation and consequently, the photoelectrochemical activity for water splitting is enhance…

Materials scienceGeneral Chemical EngineeringInorganic chemistry02 engineering and technologyElectrolyte010402 general chemistry01 natural sciencesINGENIERIA QUIMICAsymbols.namesakeZINCRAMAN-SPECTROSCOPYANODIZATIONTIO2 NANOTUBESHydrogen productionAnodizingELECTROLYTESPHOTOCATALYTIC ACTIVITYHeterojunctionGeneral Chemistry021001 nanoscience & nanotechnologyHYDRODYNAMIC CONDITIONSEVOLUTION0104 chemical sciencesARRAYSElectroquímicaField electron emissionsymbolsWater splitting0210 nano-technologyRaman spectroscopySENSITIZED ZNODark current
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Design and characterization of the SiPM tracking system of NEXT-DEMO, a demonstrator prototype of the NEXT-100 experiment

2013

NEXT-100 experiment aims at searching the neutrinoless double-beta decay of the Xe-136 isotope using a TPC filled with a 100 kg of high-pressure gaseous xenon, with 90% isotopic enrichment. The experiment will take place at the Laboratorio Subterraneo de Canfranc (LSC), Spain. NEXT-100 uses electroluminescence (EL) technology for energy measurement with a resolution better than 1% FWHM. The gaseous xenon in the TPC additionally allows the tracks of the two beta particles to be recorded, which are expected to have a length of up to 30 cm at 10 bar pressure. The ability to record the topological signature of the beta beta 0 nu events provides a powerful background rejection factor for the bet…

Enginyeria -- InstrumentsMECANICA DE LOS MEDIOS CONTINUOS Y TEORIA DE ESTRUCTURASBar (music)Tracking (particle physics)7. Clean energy01 natural sciencesEngineering instrumentsTECNOLOGIA ELECTRONICAchemistry.chemical_compoundData acquisitionSilicon photomultiplierOptics0103 physical sciencesPhysical instrumentsVisible and IR photons (solid-state)010306 general physicsInstrumentationPhoton detectors for UVMathematical PhysicsDetectors de radiacióPhysics010308 nuclear & particles physicsDynamic rangebusiness.industryTime projection Chambers (TPC)Electrical engineeringTetraphenyl butadieneFísicaTracking systemDetectorsGaseous imaging and tracking detectorschemistryNuclear countersParticle tracking detectors (Solid-state detectors)Física -- InstrumentsbusinessDark current
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1993

Langmuir-Blodgett films from a polymer with triphenylene moieties in the side groups deposited on a quartz substratum with aluminium and gold electrodes show a dark conductivity in the plane of the Langmuir-Blodgett film. This dark conductivity is increased using gold electrodes as compared with aluminium electrodes. It depends in a superlinear way upon the applied electric field and is not enhanced by oxygen. The dark conductivity can be enhanced by doping the Langmuir-Blodgett films with iodine but it is not influenced by doping the Langmuir-Blodgett films with 2,4,7-trinitro-9-fluorenone. Upon excitation in the absorption band of the triphenylene moiety an in-plane photocurrent, which is…

PhotocurrentChemistryPhotoconductivityDopingAnalytical chemistrychemistry.chemical_elementTriphenyleneConductivityLangmuir–Blodgett filmchemistry.chemical_compoundAluminiumPolymer chemistryOrganic chemistryDark currentDie Makromolekulare Chemie
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High-sensitive switchable photodetector based on BiFeO3 film with in-plane polarization

2015

A high-sensitive and fast-response photodetector based on BiFeO3 (BFO) ferroelectric thin film is fabricated using coplanar electrode configuration. A large photocurrent/dark current ratio is found up to two orders of magnitude at 1 V bias. Enhanced photocurrent and rectification behavior of the photodetector are observed after applying high voltage pulses to the BFO film. The short-circuit current varies systematically with the poling process and increases linearly with the light density. On the contrary, the open-circuit voltage keeps as a constant during the measurements. We attribute these behaviors to the depolarization field and the interfacial fields at the film-electrode interfaces.…

PhotocurrentMaterials sciencePhysics and Astronomy (miscellaneous)business.industryPhotoconductivityPolingOptoelectronicsPhotodetectorHigh voltagebusinessFerroelectricityVoltageDark currentApplied Physics Letters
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Silicon Photomultipliers Signal-to-Noise Ratio in the Continuous Wave Regime

2014

 Abstract— We report on Signal-to-Noise Ratio measurements carried out, in the continuous wave regime, at different bias voltages, frequencies and temperatures, on a class of silicon photomultipliers fabricated in planar technology on silicon p- type substrate. Signal-to-Noise Ratio has been measured as the ratio of the photogenerated current, filtered and averaged by a lock-in amplifier, and the Root Mean Square deviation of the same current. The measured noise takes into account the shot noise, resulting from the photocurrent and the dark current. We have also performed a comparison between our SiPMs and a photomultiplier tube in terms of Signal-to-Noise Ratio, as a function of the tempe…

PhotomultiplierMaterials sciencePhysics::Instrumentation and Detectorsbusiness.industryAmplifierElectrical engineeringShot noiseSettore ING-INF/02 - Campi ElettromagneticiNoise (electronics)Settore ING-INF/01 - ElettronicaAtomic and Molecular Physics and OpticsSignal-to-noise ratioOpticsSilicon photomultiplierSiPM SNR noise silicon detector photomultiplierContinuous waveElectrical and Electronic EngineeringbusinessDark current
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The characterisation of the multianode photomultiplier tubes for the RICH-1 upgrade project at COMPASS

2008

Abstract A major upgrade of the Cherenkov photon detection system of COMPASS RICH-1 has been performed and it has been in operation since the 2006 physics run. The inner part of the photon detector has been replaced by a different technology in order to measure Cherenkov photons at high photoelectron rates, up to several times 10 6 per second and per channel. Cherenkov photons from 200 to 750 nm are detected by 576 multianode photomultiplier tubes (MAPMTs) with 16 channels each, coupled to individual fused silica lens telescopes and fast, high sensitivity and high time resolution electronics read-out. To guarantee an optimal performance of the complete system, parameters like dark current, …

PhysicsNuclear and High Energy PhysicsPhotomultiplierPhotonPhysics::Instrumentation and Detectorsbusiness.industryDetectorOpticsUpgradeCompassQuantum efficiencybusinessInstrumentationCherenkov radiationDark current
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Dynamical analysis of electron transport in RF cavities and photomultipliers tubes

2021

El objetivo de este trabajo es el estudio de la dinámica de haces y corrientes de electrones en cavidades aceleradoras de radiofrecuencia (RF) y en tubos fotomultiplicadores. Por una parte, los haces de electrones presentan una gran importancia histórica tanto en aplicaciones directas (televisiones, hornos de microondas, tratamiento del cáncer), como en la generación de radiación sincrotrón. La última generación de fuentes de rayos X muy brillantes se basa en los láseres de electrones libres (XFEL). No obstante, para producir los haces de electrones que emitirán dichos rayos X como radiación sincrotrón, se necesitan campos eléctricos de gran intensidad lo que produce que, debido a la emisió…

secondary electron emissionphotomultiplier tubesBoris methodsimulationselectron transportdark currentsrf cavities
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Growth and characterization of PbI2-decorated ZnO nanowires for photodetection applications

2020

Financial support provided by Scientific Research Project for Students and Young Researchers Nr. SJZ/2017/1 realized at the Institute of Solid State Physics, University of Latvia is greatly acknowledged. The authors are grateful to Liga Bikse for XRD measurements.

NanostructurePhotoluminescenceMaterials sciencePhotodetector02 engineering and technologySubstrate (electronics)010402 general chemistry01 natural sciences7. Clean energyResponsivityElectronic structure calculationsPbI2:NATURAL SCIENCES:Physics [Research Subject Categories]Layered materialsElectron microscopyMaterials ChemistryPhotodetectorLead oxidebusiness.industryMechanical EngineeringMetals and Alloys021001 nanoscience & nanotechnology0104 chemical sciencesNanowireMechanics of MaterialsTransmission electron microscopyOptoelectronics0210 nano-technologybusinessDark currentJournal of Alloys and Compounds
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Charge Transport in Trap-Sensitized Infrared PbS Quantum-Dot-Based Photoconductors: Pros and Cons

2018

Control of quantum-dot (QD) surface chemistry offers a direct approach for the tuning of charge-carrier dynamics in photoconductors based on strongly coupled QD solids. We investigate the effects of altering the surface chemistry of PbS QDs in such QD solids via ligand exchange using 3-mercaptopropionic acid (MPA) and tetrabutylammonium iodide (TBAI). The roll-to-roll compatible doctor-blade technique was used for the fabrication of the QD solid films as the photoactive component in photoconductors and field-effect phototransistors. The ligand exchange of the QD solid film with MPA yields superior device performance with higher photosensitivity and detectivity, which is due to less dark cur…

Materials scienceFabricationInfrareddoctor bladeGeneral Chemical EngineeringOptical power02 engineering and technology010402 general chemistry01 natural sciencesArticlequantum dot solidlcsh:ChemistryResponsivityPhotosensitivityPbS QD photodetectorsGeneral Materials Sciencebusiness.industryNanotecnologiaPbS quantum dotsPhotoconductivityCiència dels materials021001 nanoscience & nanotechnology0104 chemical sciencesPbS QD photoconductivityligand exchangelcsh:QD1-999Quantum dotOptoelectronicssolution processing0210 nano-technologybusinessDark current
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Preliminary radiation hardness tests of single photon Si detectors

2010

Single photon Si detectors were fabricated by STMicroelectronics and fully characterized in standard operation conditions and after irradiations. Both single cells and arrays, of dimensions ranging from 5x5 up to 64x64, were electrically tested. The devices operation was studied as a function of the temperature from -25 degrees C to 65 degrees C varying the voltage over breakdown, from 5% up to 20% of the breakdown voltage before and after irradiation using both light ions, 10 MeV B ions to doses in the range 3x10(7)-5x10(10) cm(-2), and X-rays irradiations in the range 0.5-20 krad(Si). Optical characterization was performed using a laser at 659 nm and opportunely chosen filters to vary the…

Physicsbusiness.industryOptical powerSilicon Photomultiplier single photon avalanche diode dark count gain light ion irradiation X-rays irradiationSilicon photomultiplierOpticsSingle-photon avalanche diodeRadiation damageOptoelectronicsBreakdown voltageIrradiationbusinessRadiation hardeningDark current
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